Efficient current injection light-emitting diode

The utility model relates to an efficient current injection light-emitting diode and belongs to the optical electronic technical field, in particular, the AlGaInP quaternary system light-emitting diode manufacturing technical field. The efficient current injection light-emitting diode comprises a second electrode, a substrate, an N-GaAs transition layer, an AIAs/AlGaAs reflective layer, an N-AlGaInP lower limiting layer, a MQW (multiple quantum well) active layer, a P-AlGaInP upper limiting layer, a P-GaInP buffer layer, P-Gap current spreading layers, a transparent eclectic conduction layer and a first electrode which are distributed sequentially from bottom to top. The efficient current injection light-emitting diode is characterized in that the P-Gap current spreading layers include three layers which are a first P-Gap current spreading layer, a second patternized P-Gap current spreading layer and a third patternized P-Gap current spreading layer respectively. According to the efficient current injection light-emitting diode of the utility model, the distribution of current injection is changed, and current injection efficiency can be greatly improved, and the luminous intensity of the light-emitting diode can be improved, and luminous efficiency can be effectively improved.