A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm P sat and 16% PAE in 45-nm SOI CMOS

A novel stacked FET digital-to-RF converter is implemented in 45-nm SOI CMOS, which shares DC current through an I/Q digital-to-analog converter (DAC), I/Q mixer, and stacked-FET PA to provide high output power. The proposed architecture transmits at 1.25 Gbps for QPSK at 45GHz. This transmitter exhibits a 21.3-dBm saturated output power, while achieving a peak PAE of 16%. The circuit occupies 0.3 mm 2 including pads, while the PAE and P sat remains above 13% and 18 dBm from 42 to 47 GHz.