Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy

We demonstrate the possibility of selective-area growth of ordered arrays of GaN nanowires by molecular beam epitaxy on SiOx/Si substrates patterned by photolithography with microspherical lenses without the preliminary formation of seed layers. The effect of the substrate temperature on the morphological properties of the obtained arrays of nanowitres is studied. The optimal growth parameters ensuring the selective-area growth of GaN nanowires are experimentally found.