Thein-situ Annealing ofElectroless Deposited Copper Films Using NITDMethodforULSI

3.SUMMARY Inthis paper wedemonstrate thefeasibility ofdirect electroless plating ofcopper intheNITDsystem with in-situ annealing treatment. Asaresult ofthehigh temperature effect during deposition, thepeak ratio ofCu (111)/Cu (200) ofcopper film reached 19.Theresistivity ofas-deposited Culayer was aslowas2.45 [Q-cm. TheNTID system, using single step todeposit metalfilm, hasseveral advantages that can discard the post-annealing andsimplify thedeposition processes. Ithaspotential fortheapplication onULSI.