Design and analysis of AlGaInP-based light emitting diodes with SiO2 current blocking layer

In this study, the fabrication and characterization of AlGaInP-based light-emitting diodes (LEDs) with further improvement by the design of a SiO2 current blocking layer were described. It was found that with the SiO 2 CBL, the injected current can be forced to spread outside instead of flowing directly downward under the p-pad electrode. At 20mA, as compared to traditional LEDs, the optical output power for novel LEDs is increased by about 30%. We found that the novel LEDs have better saturation characteristics, this improvement is contributed to more uniform of injection current and less heat generation in the novel LED chips.