RF Performance of Hydrogenated Single Crystal Diamond MOSFETs

Hydrogenated diamond MOSFETs with gate length of 350 nm are fabricated by a self-aligned process on (001)-oriented single crystal diamond substrate. The hydrogen-terminated diamond MOSFETs show maximum drain current density of 233 mA/mm at V GS =-4 V, and transconductance of 62 mS/mm. The maximum output power density reaches 815 mW/mm at 2 GHz, which is the highest reported value for diamond transistors measured at 2 GHz.