Improving Characters of silicon devices Using by nc-si= H Films

The nanocrystalline silicon films ( nc-Si= D by PECVD method possess a series of novel properties. With the nc-Si = film depositiod on the opposite type of single silicon ( c-SiD wafers nc-Si/ c-Si heterojunclion diodes are fabricated. It is found there are a lot of unique features which are no exist in common silicon diodes. The possibility of other silicon devices fabricated by nc-Si= films such as Schottky diodes TFT transistors and so on is discussed.