Plasmachemical methods for obtaining silicon and boron nitrides on indium antimonide

The authors describe plasmachemical methods for synthesizing insulating layers which enable obtaining InSb-MIS structures with parameters that are comparable with those obtained by the method of chemical deposition of SiO/sub 2/ from a mixture of monosilane and oxygen. The authors selected hexamethylcyclotrisilasane ((CH/sub 3/)/sub 2/SiNH)/sub 3/ (HMCTS) and borazine (B/sub 3/N/sub 3/H/sub 6/), which are less expensive and more easily obtained in the pure state than monosilane, as the starting reagents for the plasmachemical synthesis of the layers. The HMCTS films were deposited with a tunnel reactor employing plasma excitation of the inductive type, while the boron nitride layers were obtained in a reactor of the planar type. The authors studied the chemical composition of the films by single-transmission IR spectroscopy and by the method of repeated breakdown of total internal reflection.