High-power InGaAs/GaAs singlemode laser diodes with reactive-ion-etched ridges

Continuous-wave (CW) output powers in excess of 320 mW with fabrication yields as high as 90% have been realised from strained-layer InGaAs/GaAs ridge waveguide laser diodes fabricated by SiCl 4 reactive ion etching. Single longitudinal mode operation to 100 mW and single spatial mode operation up to 200 mW CW at a wavelength of 965 nm were achieved for 3.5 μm-wide, 650 μm-long discrete devices mounted junction-side down. The relative intensity noise at frequencies of 1-2GHz is ∼140-150 dB/Hz