A 2.1-Mpixel Organic Film-Stacked RGB-IR Image Sensor With Electrically Controllable IR Sensitivity

This paper describes an RGB-infrared (IR) organic CMOS image sensor with electrically controllable IR sensitivity. The sensitivities of all the pixels in the image sensor, which has the structure of two directly stacked organic layers with a high resistance ratio, are simultaneously controlled by changing the applied voltage to the organic films. The fabricated image sensor, with a pixel pitch of $3~\mu \text{m}$ , has 2.1 Mpixels (1920 $\times $ 1080) in both the RGB and IR regions. The sensor can switch between color imaging and IR imaging modes frame by frame without requiring a mechanically retractable IR-cut filter.