Growth Design for High Quality AlxGa(1-x)N Layer with High AlN-fraction on Si (111) Substrate by MOCVD

Abstract The constraints on increasing the AlN content in active AlGaN device layers on Si substrates for AlGaN-channel HEMTs and UV applications are explored. The essential qualifications an AlGaN semiconductor material must satisfy to be used as functional device are crack free films, a surface roughness of