Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of EB evaporated precursors

Abstract By sulfurization of EB evaporated precursors, CZTS(Cu 2 ZnSnS 4 ) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 10 4 cm −1 . The resistivity was in the the order of 10 4 Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.