Improving Junction Uniformity and Quality with Optimized Diffusion-less Annealing

Comparisons between B, Ge+B and B 18 H 22 implantations for pSDE were made. With Flash only the localized individual Xe-lamps signature was clearly detected by PLi and Rs measurements. Adding a spike first RTA anneal dramatically improved the global and local micro uniformity variation by 2-3x with either a 1000degC or 900degC spike 1st anneal. The highest quality B junctions were achieved with B 18 H 22 for all annealing conditions as verified by PLi value and junction leakage current.