Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-Lg Product of 13.9 GHz-μm

Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit I ds,sat = 908 mA/mm and g m = 451 mS/mm. In small-signal operation, cut-off frequency F T /F MAX = 100/97 GHz are achieved, which gives a high value of (F T *L g ) = 13.9 GHz*μm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz.