A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects

HEMT suffers from parasitic resistance (R sd ) and capacitance(C gd ) effects with the shrinking of channel length, leading to degraded performance in logic and RF applications. A new while simple method to extract parasitic RC has been proposed to construct accurate transport parameters in HEMTs. In comparison to the constant-R sd method, this new voltage dependent method provides more convincing results, especially for very short channel devices. On the other hand, an accurate C gd correction method has also been incorporated to adequately represent the mobility. Finally, a guideline to design high performance HEMTs has been proposed.