Spin dependent recombination in F&doped silicon p-n junctions

Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p-n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g-value point to a metal-vacancy complex. Deep level transient spectroscopy reveals the presence of the Pt acceptor level (O/ ) at EC 0.23 eV and the donor level ( + 10) at E, + 0.32 eV in the same device. Calculations of the recombination rates support that spin dependent recombination occurs at the Pt ( + /O) donor level.