Multi-wavelength high-power semiconductor laser device light source system used for laser processing

The utility model provides a multi-wavelength high-power semiconductor laser device light source system used for laser processing. Each semiconductor laser device unit of a semiconductor laser device stack array is provided with two sets of laser chips which are different in wavelength. A shaping module comprises a reflecting mirror and a light filter. The light filter is coated with a film with high reflection of laser with wavelength of lambda 1 and a film with high transmission of laser with wavelength of lambda 2. The reflecting mirror is arranged on a light emergent path of a first laser chip set, and the light filer is arranged on the light emergent path of a second laser chip set. The mirror surface of the reflecting mirror and the light filter are arranged in parallel so that beams of laser of the second laser chip set and the beams of laser of the first laser chip set are combined via the light filter and then emergent. The system is high in output energy so that multi-wavelength broad spectrum and high-power output can be realized and various different metal materials can be processed in laser processing application. Compared with single wavelength, metal surface absorption efficiency is higher in processing of metal with different wavelengths.