Supercontinuum Generation in Bandgap Engineered Silicon Rich Nitride Waveguides – a New Back-End CMOS Compatible Nonlinear Optics Platform

Supercontinuum generation over 0.6 of an octave is demonstrated at 1.55µm on silicon-rich nitride waveguides. The SRN films are engineered to have a band gap of 1.85eV, and do not suffer from two-photon absorption at 1.55µm. The SRN waveguides have a large nonlinear parameter of 550W-1/m, 500 times larger than that in silicon nitride waveguides.