REDUCTION OF SECONDARY DEFECTS IN BF, IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING

Reduction of secondary defects in 50 keV, 2x10(15) BF2/cm(2) implanted Si(100) has been studied by Rutherford backscattering and channeling technique. Secondary defects with high densities have been found in BF2 implanted Si(100) after thermal annealing and rapid thermal annealing. However, a noticeable reduction of secondary defects in BF2 damaged region was observed when a buried amorphous layer was formed by an additional irradiation of 1.0 MeV Si+ ions prior to annealing (i.e., ion beam defect engineering process).