Formation and atomic configuration of Si(100)c(4 × 4) structure

Abstract It was reported that the Si(100)c(4 × 4) structure appears rarely during heat treatments of surface cleaning in ultra-high vacuum. In the present experiment, the c(4 × 4) structure is formed reproducibly by special surface processing at a hydrogen exposure higher than 10 −2 L (10 −6 Torr·.s) and afterwards annealing at 570–690 °C. The high hydrogen exposure produces missing-dimer defects by vaporization of volatile silane and subsequent annealing causes order of missing-dimer defects. By intensity analysis of low energy electron diffraction patterns of c(4 × 4) and the hydrogenated surface c(4 × 4)-H. it is concluded that c(4 × 4) is one of the ordered structures with missing-dimer defects formed on the basic 2 × 1 structure.