High temperature stability of p+-Si/p-diamond heterojunction diodes
2021
The high-temperature electrical stability of p+-Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding are investigate and compared with that of Al/diamond Schottky barrier diodes (SBDs). We suggest that p+-Si/p-diamond HDs are stabler than diamond SBDs against annealing.
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