Influence of annealing on the characteristics of nanostructure ZnSe thin films

ZnSe thin films of thickness of 200 nm are deposited by vapor deposition technique and later annealed in argon at 100°C and 300°C. XRD reveals that the grain size of ZnSe phase increases with the annealing temperature. The Raman spectrum shows peaks corresponding to LO mode of ZnSe and the intensity of Raman peaks is found to increase with increasing grain size. The optical studies correspond to band gap for ZnSe and the value of band gap is found to decrease with increasing annealing temperature which could be attributed to the quantum confinement effect.