Characterization of silicon photodiode detectors with multilayer filter coatings for 17 to 150 A

Silicon photodiode detectors with multilayer coatings were characterized using synchrotron radiation. The coatings were composed of thin layers of metals and other materials and were designed to provide wavelength bandpasses in the 17 - 150 angstrom wavelength region. The measured transmittances of the multilayer coatings are in good agreement with the calculated transmittances. The modeling accounts for the transmittance of the multilayer coating and the deposition of the radiation energy in the underlying silicon photodiode. Detectors with the following layer materials (and wavelength bandpasses were characterized: Fe/Al (17 - 30 angstrom), Mn/Al (19 - 30 Angstrom), V/Al (24 - 35 angstrom), Ti/C (27 - 40 angstrom), Pd/Ti (27 - 50 angstrom), Ti/Zr/Al (27 - 50 angstrom), Ag/CaF 2 /Al (36 - 50 angstrom), and Ti/Mo/C (50 - 150 angstrom).