Resistive layer, resistive storage having same and process for preparing same

The invention relates to the technical field of microelectronic semiconductors and discloses a resistive layer, a resistive storage having the same, and a process for preparing the same. In the invention, a process method of forming an alloy layer by depositing three layers of metal thin films on a bottom electrode of the resistive storage continuously and then forming the resistive layer is usedto realize the effective control over the generation of medium- and thin-wire conductive channels in the resistive layer to improve the consistency of the resistive storage. The process is compatiblewith the conventional semiconductor production process and is simple and low in production cost.