Rapid Characterization of Vertical Threading Dislocations in GaN Using a Dedicated Scanning Transmission Electron Microscope

We demonstrate that the vertical threading dislocations (VTDs) in GaN-based materials can be characterized using a dedicated Scanning Transmission Electron Microscope (STEM). Each dislocation can be readily identified as edge, screw or mixed; distribution and density of each type can be easily evaluated. Comparing to conventional TEM, STEM characterization of dislocations is rapid, simple and easy to interpret.