Study of gain for SiGeSn/GeSn/SiGeSn multiple quantum well lasers

Grey Abernathy,Yiyin Zhou,Solomon Ojo,Yuanhao Miao,Wei Du,Greg Sun,Richard A. Soref,Jifeng Liu,Yong-Hang Zhang,Mansour Mortazavi,Baohua Li,Shui-Qing Yu

Study of gain for SiGeSn/GeSn/SiGeSn multiple quantum well lasers

2020

Grey Abernathy
Yiyin Zhou
Solomon Ojo
Yuanhao Miao
Wei Du
Greg Sun
Richard A. Soref
Jifeng Liu
Yong-Hang Zhang
Mansour Mortazavi
Baohua Li
Shui-Qing Yu

We studied the design of SiGeSn/GeSn/SiGeSn multiple-quantum-well active regions and the gain threshold needed to achieve lasing. The enhancement of optical confinement factor was demonstrated by introducing a SiGeSn cap.

Keywords:

Chemical vapor deposition
Lasing threshold
Refractive index
Laser
multiple quantum
Optoelectronics
Materials science

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