Raman signatures of defects-dependent vibration modes in boron doped monolayer to multilayer graphene

Abstract Raman spectroscopy has been widely utilized to investigate the properties of graphene materials and defect effects due to external injection. We presented a detailed Raman spectroscopy study of boron-doped single-layer to six-layer graphene with three different concentrations of substitutional boron atoms as ∼0.16 wt. %, ∼0.48 wt. %, and ∼0.76 wt. %. The Raman signatures of G, 2D, and defect-dependent modes were illustrated. The properties of these modes were revealed with enhanced boron contents and increased layer number. The behaviors of defect-dependent modes reached a plateau when boron content was larger than 0.48 wt. % to show the saturation of interaction between boron and carbon atoms. These modes upshifted with increasing layer number because boron defects in diff ;erent layers interacted with each other by the cascade quenching. Our study provides a detailed investigation of how boron doping changed the properties of graphene layers by defect effects. The results will induce great potential for applications in optoelectronic devices.