Self‐aligned native‐oxide ridge‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure laser arrays

Process conditions for fabricating ridge geometry AlxGa1−xAs‐GaAs quantum well heterostructure laser arrays utilizing a high quality self‐aligned native oxide of AlxGa1−xAs are presented. Wet oxidation is performed, after etching ridges, via H2O vapor in a N2 or N2/H2(10%) carrier gas at 435–445 °C for 15–20 min. The formation of a uniform smooth oxide was found to be critically dependent on the crystal environment prior to the oxidation process. Characteristics of devices fabricated by this process are presented.