Surface modification of AlN using organic molecular layer for improved deep UV photodetector performance

Shuchi Kaushik,Tejas R. Naik,Ambali Alka,Manjari Garg,Bhera Ram Tak,Mangalampalli Ravikanth,Valipe Ramgopal Rao,Rajendra Singh

Surface modification of AlN using organic molecular layer for improved deep UV photodetector performance

2020

Shuchi Kaushik
Tejas R. Naik
Ambali Alka
Manjari Garg
Bhera Ram Tak
Mangalampalli Ravikanth
Valipe Ramgopal Rao
Rajendra Singh

A direct wide bandgap of 6.2 eV, high temperature robustness, and radiation hardness make aluminum nitride (AlN) a preferable semiconductor for deep ultraviolet (UV) photodetection. However, the pe...

Keywords:

Photodetector
Materials science
Optoelectronics
Surface modification
Nitride
Semiconductor
Dark current
Photodetection
Ultraviolet
Surface states
Responsivity

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