341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes

Hydride vapor-phase epitaxy (HVPE) was used to grow aluminum gallium nitride-based p–n diode structures on sapphire (0001) substrates. In the diode structure, an n-type AlGaN photon-emitting layer was sandwiched between n-type and p-type AlGaN cladding layers that contained higher AlN concentrations. These diode structures were processed and subsequently packaged into transistor outline cans. The light-emitting diodes (LEDs) were characterized using a state-of-the-art spectroradiometer. LED spectral emission occurred at a peak wavelength of 341 nm with a typical full width at half-maximum of approximately 14 nm. Pulsed injection currents of 110 mA resulted in greater than 2 mW of optical output power at a wavelength of 341 nm. This HVPE-grown LED’s pulsed optical power output level is comparable to reported results on similar sized metalorganic chemical vapor deposition grown ultraviolet LEDs with emission wavelengths near 340 nm.