Scattering rates due to lineal dislocations in heterostructures for the Monte Carlo charge transport simulation

We derived expressions for the scattering rates due to dislocations in pseudomorphic heterostructures. We gave explicit formulas for those scattering rates in the free and the confined states, depending on the initial carrier energy and on the component of the total wave vector parallel to the dislocations. We demonstrated that this new scattering process could affect the electron mean velocity by more than 30% from the ideal case treated commonly by the Monte Carlo simulators.