Characterisation of semiconductor materials for ionising radiation detectors

Abstract Methods for the detection and characterisation of semiconductor material parameters and inhomogeneities are analysed. The peculiarities of different “classical” material and structure characterisation methods are discussed. The methods of lifetime and surface recombination mapping and electric field distribution in the samples are presented. Some results of investigations of GaAs, Si and SiC are used for the characterisation of different peculiarities or methods.