Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering

Abstract In this paper, we report a novel implanted vertical surface emitting lasers (VCSELs) utilizing silicon implantation induced disordering. The VCSELs exhibit kink-free current–light output performance with threshold currents ∼2.4 mA, and the slope efficiencies ∼0.45 W/A. The threshold current change with temperature is minimal and the slope efficiency drops less than ∼30% when the substrate temperature is raised to 90 °C. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps. We have accumulated life test data up to 5000 h at 100 °C/20 mA with exceptional reliability and the WHTOL (high temperature and high humidity 85 °C/85 operating lifetime) biased at 8 mA has passed over 2000 h.