10 000 h, 30-50 mW CW operation of 670-690 nm visible laser diodes

The reliability of high-power AlGaInP red laser diodes with strained DQW (double quantum well) active layer and an MQB (multiquantum barrier) has been investigated. For the nonwindow 690 nm lasers and the 670 nm window lasers 10000 h CW operation under the conditions of 60 degrees C, 30 mW and 30 degrees C, 50 mW, respectively, was realised.