Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers
2012
Reduced performance in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed
“diamond-before-gate" is shown to improve the thermal budget of the deposition process and enables large area diamond without degrading the gate metal NCD capped devices had a 20% lower channel temperature at equivalent power dissipation.
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