$\hbox{TiSi}_{2}$ Nanocrystal Metal Oxide Semiconductor Field Effect Transistor Memory

A TiSi 2 nanocrystal (NC) memory was fabricated. TiSi 2 NCs were synthesized on SiO 2 by annealing Ti covered Si NCs. Compared to the reference Si NC memory, both experiment and simulation results show that TiSi 2 NC memory exhibits larger memory window, faster writing and erasing, and longer retention lifetime as a result of the metallic property of the silicide NCs. Due to thermally stable, CMOS compatible properties, TiSi 2 NCs are highly promising for nonvolatile memory device application.