Photoluminescence from hydrogenated amorphous silicon oxide thin films

Abstract The photoluminescence (PL) properties of amorphous silicon oxide with different oxygen content prepared by dual-plasma chemical vapor deposition have been studied. The PL bands in the energy range of 1.7 to 3.2 eV excited by Kr ion laser were observed. The visible light emission from a-SiO x :H is sensitive to the oxygen content. The 3.2 and 2.58 eV PL bands are independent of x . The 2.58 eV PL band is attributed to interfacial defects states. The 3.2 eV PL band is attributed to the oxygen excess defects.