Energy dependence of the Z1-range oscillation effect in silicon

Abstract Precise measurements of projected ranges for several ionic species implanted into amorphous silicon at energies from 10 to 380 keV are compared with the new theoretical predictions of Biersack and Ziegler. For Ga, Br, Rb, Pd, Sn and Bi ions, the experimental and calculated ranges agree within ± 10% or better. In the cases of Eu, Yb and Au however, large deviations, up to 60%, were observed at very low energies. These “ Z 1 -oscillations” were found to diminish with increasing energies and disappeared around 100 keV.