InGaAs/InAlAs/InP power hemt with an improved ohimc contact and an extremely high operating voltage

An InGaAs/InAlAs/InP HEMT has been fabricated with 0.15µm EBL gate, double gate recess and improved Ohmic contact. While maintaining a peak transconductance (Gmp) in excess of 1000mS/mm, an onstate burnout voltage exceeding 8V and an operating drain voltage of 5V have been achieved. A loadpull measurement at 40GHz was conducted. An output power density of 471mW/mm, a power-added efficiency of 38% and a power gain of 8dB were demonstrated, making this technology attractive for power applications at millimeter wave frequencies.