A ReferenceGeometry Based ScalingApproach forBipolarTransistor Model Mextram

A reference geometry basedscaling approach forbipolar transistor modelMextramhasbeencreated and implemented inAHDL Verilog-A. Thescaling ismainly basedonthreedifferent physical properties oftheMextram parameters, whichscalewithgeometryofthebipolar transistor. Allthescaling parameters inthescaling equations areextracted directly fromthemeasurement dataofvarious geometries. Thenewscaleable modelsimulation results show goodfittoCV,DC,FtandS1l, S21upto40GHzmeasured fromhigh-speed SiGeHBTs.