Damascene metal gate MOSFETs with Co silicided source/drain and high-k gate dielectrics
2000
Damascene metal gate MOSFETs with Co silicided source/drain and high-k dielectrics were successfully formed without agglomeration of CoSi/sub 2/ films. Good transistor characteristics were reproducibly obtained and shorter inverter delay was confirmed by 151 stage CMOS ring oscillators.
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