And an array of nonvolatile memory elements

A nonvolatile memory element comprising a first electrode, a resistor structure, a selector and a second electrode structure. A first resistive structure comprising a first oxide layer and a metal layer. Selector structure disposed on the resistive structures. Selecting structure comprises a second oxide layer, a third oxide layer and a fourth oxide layer. A second oxide layer disposed on the first metal layer. The third oxide layer is disposed on the second oxide layer. The fourth oxide layer is disposed on the third oxide layer. Selector structure includes a dual polarity selector having a first end and a second end. Bipolar selector in accordance with a tunneling electron current bias both ends thereof by a first end to a second end of the stream, or the stream by the second end to the first end. Further, a nonvolatile memory array including the memory elements also provided.