Effect of electrode materials and annealing on metal-semiconductor contact of Ga2O3 with metal

Gallium oxide (Ga2O3) thin films were prepared on Si substrate by magnetron sputtering. The obtained samples were comprehensively characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). Ti, Pt, Ni and AZO were deposited on the Ga2O3 thin films as electrodes. This paper mainly studies the metal-semiconductor contact formed by these four materials on the films and the influence of annealing at 500 °C on the metal-semiconductor contact. The I-V characteristics show a good linear relationship, which indicates ohmic contact between Ga2O3 and other electrodes.