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Photoluminescence properties of epitaxial sulphur doped GaAs layers
Photoluminescence properties of epitaxial sulphur doped GaAs layers
1989
I. A. Bobrovnikova
Vilisova
L. G. Lavrenteva
L.P. Porokhovichenko
M. V. Turshatova
Keywords:
Annealing (metallurgy)
Materials science
Photoluminescence
Epitaxy
Crystal structure
Doping
Optoelectronics
Crystallographic defect
Luminescence
Solid solution
Correction
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