Response to anions of AlGaN∕GaN high-electron-mobility transistors

The response of AlGaN∕GaN electrolyte-gate high-electron-mobility transistors to various concentrations of the potassium salts KCl, KBr, KNO3, and KSCN in an aqueous solution has been investigated. The transistors’ drain-source current decreased with increasing concentration of potassium salts. This indicates that the potential at the gate becomes more negative with respect to the channels’ potential, suggesting a selective anion adsorption onto the GaN gate surface area.