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Electron-spin-resonance study on nitrided MOS interfaces of epitaxial 4H-SiC substrates
Electron-spin-resonance study on nitrided MOS interfaces of epitaxial 4H-SiC substrates
2016
T. Umeda
Yohei Kagoyama
Takafumi Okuda
Jun Suda
T. Kimoto
Ryoji Kosugi
Mitsuo Okamoto
Shinsuke Harada
Keywords:
Nuclear magnetic resonance
Nitriding
Epitaxy
Electron paramagnetic resonance
Materials science
nitrogen doping
Optoelectronics
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