A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI

This paper presents a 28-GHz-band high efficiency linear power amplifier in 56-nm CMOS SOI for 5G mobile communication systems. A novel adaptive bias circuit is proposed to attain high linearity and efficiency simultaneously. In addition, a source degeneration inductor is utilized to improve the gain linearity of the power amplifier. It is expected that the power amplifier exhibits a P1dB of 20 dBm with a linear power gain of 13.2 dB and a peak PAE of 41.4% at a supply voltage of 3.6 V.