Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm 2 /Vs, 1.5×10 18 cm -3 , 18.1 %, and 8.5 × 10 −5 Ω⋅cm 2 , respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.