A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50- $\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

In this letter, a bipolar resistive switching RAM based on Ni/AlO y /n + -Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;10 3 ), a good retention characteristic (>; 10 4 s at 100 ° C ), and a wide readout margin for cross-bar architecture (number of word line N >; 2 5 for worst case condition).