Influences of acetylacetone and annealing treatment on the synthesis of Mg(Zr0.05Ti0.95)O3 dielectric thin films by sol–gel method

In this study, electrical and optical properties and the microstructures of Mg(Zr0.05Ti0.95)O3 thin films prepared by the sol–gel method using acetylacetone modifier on n-type Si(100) substrates followed by annealing at different temperatures were investigated. The increase in grain size of Mg(Zr0.05Ti0.95)O3 thin films occurred with an increase in annealing temperature and the ratio of acetylacetone to (Zr+Ti) component. Furthermore, it was determined that with an increase in the annealing temperature from 600 to 800 °C and the ratio of acetylacetone to (Zr+Ti) component from to , the dielectric constant increases from 9 to 14.8 at 1 kHz and the loss tangent decreases from 0.3 to 0.04. In addition, the optical bandgap and the leakage current density also improved with increasing annealing temperature and the ratio of acetylacetone to (Zr+Ti) component. These results indicated that the sol–gel route using acetylacetone as a modifier can generate Mg(Zr0.05Ti0.95)O3 thin films of high quality with the optimization of the content of acetylacetone and the annealing temperature.